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采用自主开发的4H-SiC高温氧化技术,并结合低压化学气相淀积方法,在器件表面形成较为致密的氧化层,降低了器件的反向泄漏电流,提高了器件的击穿电压,同时也提高了器件的输出功率及功率增益,为器件长期稳定可靠工作奠定了工艺基础。采用此技术后,单胞20 mm左右栅宽器件在2 GHz脉冲条件下(脉冲宽度300μs,占空比10%)输出功率达78 W,比原工艺的器件输出功率提高了20 W以上,功率增益提高了1.5 dB,达到8.9 dB左右,功率附加效率也从23%提升到32%,初步显示了该工艺技术在制备4H-SiC微波功率器件中的优势。
The self-developed 4H-SiC high temperature oxidation technology, combined with low-pressure chemical vapor deposition, forms a dense oxide layer on the surface of the device, reducing the reverse leakage current of the device and increasing the device breakdown voltage as well as increasing The device output power and power gain for the device long-term stable and reliable work laid the foundation for the process. With this technology, the output power of a single-cell 20-mm wide gate-width device under the condition of 2 GHz pulse (pulse width 300μs, duty ratio 10%) is 78 W, which is 20 W higher than the output power of the original device, Gain increased by 1.5 dB, reaching 8.9 dB, the additional power efficiency from 23% to 32%, preliminary shows the process technology in the preparation of 4H-SiC microwave power device advantage.