以前采用低膨胀高导热的W-Cu或Mo-Cu合金作半导体器件散热器,但存在问题是原料稀贵,不稳定,成形性能和机加工性能较差。日本JFE精密公司寺尾星明等人采用与W、Mo同属6A族的Cr,首先得Cr块破碎,制成74μm Cr粉,放入Al2O3器皿中,不加压,在流量为4L/min的氢气中,在1773K保温60min。 In the past, W-Cu or Mo-Cu alloy with low thermal conductivity and high thermal conductivity was used as a semiconductor device heat sink, but the problem was that the raw materials were rare and unstable, and the formability and machinability were poor. Japan JFE precision company Siwei Xing Ming and W, Mo belong to the same group 6A Cr, first Cr crushing, made of 74μm Cr powder, into the Al2O3 vessel, without pressure, at a flow rate of 4L / min of hydrogen In 1773K insulation 60min.