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This paper present a highly-integrated neurostimulator with an on-chip inductive power-recovery frontend and high-voltage stimulus generator. In particular, the power-recovery frontend includes a high-voltage fullwave rectifier(up to 100 V AC input), high-voltage series regulators(24/5 V outputs) and a linear regulator(1.8/3.3 V output) with bandgap voltage reference. With the high voltage output of the series regulator, the proposed neurostimulator could deliver a considerably large current in high electrode-tissue contact impedance. This neurostimulator has been fabricated in a CSMC 1 m 5/40/700 V BCD process and the total silicon area including pads is 5.8 mm2. Preliminary tests are successful as the neurostimulator shows good stability under a 13.56 MHz AC supply. Compared to previously reported works, our design has advantages of a wide induced voltage range(26–100 V), high output voltage(up to 24 V) and high-level integration, which are suitable for implantable neurostimulators.
This paper present a highly-integrated neurostimulator with an on-chip inductive power-recovery frontend and high-voltage stimulus generator. In particular, the power-recovery frontend includes a high-voltage fullwave rectifier (up to 100 V AC input), high -voltage series regulators (24/5 V outputs) and a linear regulator (1.8 / 3.3 V output) with bandgap voltage reference. with the high voltage output of the series regulator, the proposed neurostimulator could deliver a considerably large current in high electrode- tissue contact impedance. This neurostimulator has been fabricated in a CSMC 1 m 5/40/700 V BCD process and the total silicon area including pads is 5.8 mm2. Preliminary tests are successful as the neurostimulator shows good stability under a 13.56 MHz AC supply. Compared to previously reported works, our design has advantages of a wide induced voltage range (26-100 V), high output voltage (up to 24 V) and high-level integration, which are suitable for implantable neurostimulators .