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采用射频磁控溅射法制备了CdTe/ZnTe多层薄膜,并在制备单层CdTe薄膜和ZnTe薄膜的基础上,研究了衬底温度对CdTe/ZnTe多层薄膜性质的影响;通过XRD和透过谱、吸收谱的分析,对其结构进行了研究.结果表明在185℃下制备的CdTe/ZnTe多层膜中,CdTe和ZnTe均沿(111)晶面择优取向生长,尤其是ZnTe沿(111)晶面择优取向明显,衍射强度极大.通过比较不同衬底温度,发现185℃生长的样品衍射峰强度最高,成膜质量较好;通过吸收谱图分析,185℃下沉积的样品对光有较好的吸收性.
The CdTe / ZnTe multilayer films were prepared by RF magnetron sputtering. The effects of substrate temperature on the properties of CdTe / ZnTe multilayers were investigated based on the preparation of single-layer CdTe films and ZnTe films. The results show that CdTe and ZnTe are all grown along the (111) plane in the CdTe / ZnTe multilayers fabricated at 185 ℃, especially in the (ZnTe) 111) crystal plane has obvious preferential orientation and great diffraction intensity.Based on the comparison of different substrate temperatures, it is found that the peak intensity of the sample grown at 185 ℃ is the highest and the film quality is good. By the absorption spectrum analysis, the sample deposited at 185 ℃ Light has better absorption.