论文部分内容阅读
题 目 期 页 综 述彩电国产化中的半导体分立器件 ””·“’”‘·’“·’‘…·‘”·‘…………·、…·,·(-1)光诱导化学气相淀积(LCVD) 技术的研究进展…………··、.、…·(二1)半导体功率器件发展概况—…………·(三1)InsbCID焦平面器件中介质膜的制备 和应用………………………………(三10)制作隐埋异质结半导体激光器的新途径 ”’”’”“‘””…’··’…”…··’…………··(四1)双极＊oS复合器件及其发展动向 ”’”’”’“·”””“”…·’··’…‘··‘…’………·‘··(四5)
Title Page Summary Semiconductors Discrete Devices in Color TV Localization Photo-induced chemical vapor deposition (CVD) Research progress of LCVD technology ............ ·························································································································································································································· .................................... (10) New ways of making buried heterojunction semiconductor lasers “” “” “” “...” ... “...” ... “ (4 1) bipolar * oS composite device and its development trend ”“ ”“ ”“ ”“ ”“ ”... ... ’...’ ... ’...’ ... ... Four 5)