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利用二维半导体工艺及器件模拟工具,从结掺杂浓度、P阱与P环间距、P环尺寸控制3个方面分析了半绝缘多晶硅终端结构的击穿电压,提出了应用于1 200V沟槽栅场截止型IGBT的终端解决方案。从结的深度和终端长度两方面,将SIPOS终端技术与标准的场环场板终端技术进行了对比。结果表明,采用SIPOS终端结构并结合降低表面场技术,使得终端尺寸有效减小了58%,并且,采用SIPOS技术的终端区域击穿电压受结深的影响较小,有利于实际制造工艺的控制和IGBT器件稳定性的提升。
The two-dimensional semiconductor process and device simulation tools were used to analyze the breakdown voltage of the semi-insulating polysilicon termination structure from three aspects of junction doping concentration, P-well spacing and P-ring size control. Gate Field Stop IGBT Terminal Solutions. From the depth of the knot and the length of the terminal, the SIPOS terminal technology is compared with the standard field ring field plate terminal technology. The results show that using SIPOS terminal structure combined with the reduction of surface field technology, the terminal size can be effectively reduced by 58%. Moreover, the breakdown voltage of terminal region adopting SIPOS technology is less affected by the junction depth, which is in favor of the actual manufacturing process control And IGBT device stability improvement.