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本文综述了分子束外延技术在人造结构材料及器件上的应用,重点在于用分子束外延制备掺杂超晶格;应变层结构,无针孔硅化物和单晶二氧化硅等人造结构材料及器件。介绍了迁移增强外延(MEE)、间隔生长和温度开关等改进的 MBE技术。展望了分子束外延的发展。
In this paper, the applications of molecular beam epitaxy to artificial materials and devices are reviewed. The emphasis is on the preparation of doped superlattices by molecular beam epitaxy. Strain layer structures, pinhole-free silicides, Device. The improved MBE technology such as MEF, interval growth and temperature switch is introduced. Looking forward to the development of molecular beam epitaxy.