产生器件适配的绝缘体上的硅薄膜有不同的方法。但是大多数不适用于三维(3D)集成结构的制造。激光再结晶技术目前是生产3DIC用的单晶硅薄膜的唯一方法。该技术的改进能使诸如晶粒间界的缺陷集中定域甚至消除。已经实现了有VLSI特征的高速CMOS电路和具有垂直集成结构3D排列优点的新型器件。虽然3D集成仍然处于发展的初期阶段,但它已经开辟了新的应用前景,例如高速电路,高密度存储器,以及有自身信号处理电路的传感器。 There are different ways to create silicon-on-insulator films for device adaptation. But most do not apply to the manufacture of three-dimensional (3D) integrated structures. Laser recrystallization technology is currently the only way to produce single crystal silicon for 3DIC applications. The improvement of this technique can make the defects such as grain boundaries concentrate or even eliminate. High-speed CMOS circuits with VLSI features and new devices with 3D alignment of vertically integrated structures have been implemented. Although 3D integration is still in the early stages of development, it has opened up new applications such as high-speed circuits, high-density memory, and sensors with its own signal processing circuitry.