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报道了一种基于商用0.15μm赝配高电子迁移率晶体管工艺的单片低噪声放大器,工作频率范围为23~36GHz.它采用自偏置结构.对晶体管栅宽进行了优化设计减小栅极电阻,以得到低的噪声系数.采用吸收回路和加电阻电容网络的直流偏置结构提高电路稳定性,用多谐振点方法和负反馈技术扩展带宽.测试结果表明,其噪声系数低于2.0dB,在31GHz处,噪声系数仅为1.6dB.在整个工作频带范围内,增益大于26dB,输入回波损耗大于11dB,输出回波损耗大于13dB.36GHz处的1dB压缩点输出功率为14dBm.芯片尺寸为2.4mm×1mm.
A monolithic low noise amplifier based on commercial 0.15μm pseudomorphic high electron mobility transistor technology is reported with a working frequency range of 23-36GHz and self-biased structure. The gate width of the transistor is optimized to reduce the gate Resistor to get a low noise figure.The DC bias structure of the absorption loop and the resistor capacitor network is used to improve the circuit stability and the bandwidth is extended by using the multi-resonance point method and the negative feedback technique.The test results show that the noise figure is less than 2.0dB With a noise figure of only 1.6dB at 31GHz Gain greater than 26dB over the entire operating band, input return loss greater than 11dB and output return loss greater than 13dB 36dBm output power at 1dB compression point at 6GHz Chip size Is 2.4 mm × 1 mm.