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A Molecular Dynamics (MD) simulation with Tersoff empirical many-body potential has been employed to investigate the growth processes of diamond film with energetic species deposition. In the present study, we have studied the reaction probabilities of energetic species with energies of 0.1eV to 10eV at the substrate temperature of 1100K. In the cases of the diamond growth on the surface with H passivation, the reaction probability of hydrocarbon species considerably increases when the species energy is higher than 2eV. This means that the diamond film can grow in the case of high incident species energy without the process of hydrogen abstraction, which is needed in the case of incident species with low energy. The reaction mechanism of energetic species on hydrogen passivated diamond surface is also discussed.
A Molecular Dynamics (MD) simulation with Tersoff empirical many-body potential has been employed to investigate the growth processes of diamond film with energetic species deposition. In the present study, we have studied the reaction probabilities of energetic species with energies of 0.1eV to 10eV at the substrate temperature of 1100K. In the cases of the diamond growth on the surface with H passivation, the reaction probability of hydrocarbon species is increased increases when the species energy is higher than 2eV. This means that the diamond film can grow in the case of high incident species energy without the process of hydrogen abstraction, which is needed in the case of incident species with low energy. The reaction mechanism of energetic species on hydrogen passivated diamond surface is also discussed.