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使用微波回旋共振离子源,研究了低能Ar+离子束正入射时不同离子束能量和束流密度对单晶硅(100)表面的刻蚀效果及光学性能。结果表明,当离子束能量为1000eV,束流密度为88~310μA/cm2时,样品表面出现自组装纳米点状结构,且随着离子束流密度增加排列紧密而有序;粗糙度呈现先减小后迅速增大的趋势,在160μA/cm2附近达到极小值;刻蚀后,近红外波段内平均透过率由53%提高到57%以上,且随着纳米自组装结构有序性的提高而增大。当束流密度为270μA/cm2,能量为500~1 500 eV时,样品表面出现纳米点状结构,且随着离子束能量的增加趋于密集有序;粗糙度呈现先缓慢增加,在1 100 eV附近达到极大值,之后粗糙度迅速下降;刻蚀后样品透过率明显提高,且平均透过率随着点状结构有序性的提高而增大;刻蚀速率与离子束能量的平方成正比。自组织纳米结构的转变是溅射粗糙化和表面驰豫机制相互作用的结果。
The effects of different ion beam energies and beam densities on the surface of monocrystalline silicon (100) during the normal incidence of the low energy Ar + ion beam were studied by using the microwave cyclotron resonance ion source. The results show that when the ion beam energy is 1000eV and the beam current density is 88 ~ 310μA / cm2, self-assembled nano-dots appear on the surface of the sample, and the order is close and orderly with increasing ion beam current density; The trend of increasing rapidly after small, reaching the minimum value in the vicinity of 160μA / cm2; after etching, the average transmittance in the near infrared band increased from 53% to 57% or more, and with the self-assembly of nano-ordered structure Increase and increase. When the beam current density is 270μA / cm2 and the energy is 500-1,500 eV, the nanodots appear on the surface of the sample and tend to be dense and orderly with the increase of the energy of the ion beam. The roughness increases slowly at 1 100 eV near the maximum value, then the roughness decreased rapidly; after etching the sample transmittance increased significantly, and the average transmittance increases with the dot-like structure of the orderly increase; etching rate and ion beam energy Squared squarely proportional. The transformation of self-organized nanostructures is the result of the interaction between sputter roughening and surface relaxation mechanisms.