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在Au/Si和Ti/Si和Si 3种不同的衬底材料上 ,通过真空磁过滤弧源沉积技术制备了无氢高sp3 键含量非晶金刚石薄膜 (amorphousdiamond ,AD) .使用阳极覆盖有低压荧光粉的二极管型结构 ,对其电子场发射性能和荧光显示进行了研究 .测试表明 ,衬底过渡层对非晶金刚石薄膜的场发射行为产生重大的影响 .通过二次离子质谱 (SIMS)测试分析了AD/Ti/Si和AD/Si中界面的成分分布 .由于Ti和C之间的互扩散和反应 ,存在一定的浓度梯度 ,形成了衬底和AD薄膜之间良好的接触 ,有效降低了界面的接触势垒高度 ,使电子容易从衬底进入到AD薄膜中去 ,从而显著改善了AD薄膜的电子场发射性能 .在电场强度E =1 9 7V/ μm时 ,获得的电子场发射电流密度为 0 35 2mA/cm2 ,大大高于同场强下AD/Au/Si和Au/Si的数值 .
Hydrogen-free high sp3-bonded amorphous diamond films (ADs) were prepared by vacuum magnetic filtration arc source deposition on three different substrate materials, Au / Si and Ti / Si and Si. Phosphor diode structure, the electron field emission performance and fluorescence display were studied.The results show that the substrate transition layer has a significant impact on the field emission behavior of the amorphous diamond thin film.The secondary ion mass spectrometry (SIMS) The compositional distribution of the interface between AD / Ti / Si and AD / Si was analyzed. Due to the mutual diffusion and reaction between Ti and C, there was a certain concentration gradient, which formed a good contact between the substrate and the AD film and effectively reduced The contact barrier height of the interface makes it easy for the electrons to enter the AD film from the substrate, thereby significantly improving the electron field emission performance of the AD film. At an electric field intensity of E = 197V / μm, the obtained electron field emission The current density is 0 35 2mA / cm2, which is much higher than that of AD / Au / Si and Au / Si under the same field strength.