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报道了EMCORE公司的旋转盘反应器 ,或TurboDisc反应器 ,这是一种带有旋转盘的立式反应器。衬底片放置在高速旋转的盘上并被加热到合适的生长温度。反应物在初始阶段因高速旋转盘的牵引力被竖直向下地泵入 ,然后偏斜形成一个与衬底片托盘平行的流动区域。在“GaNzilla” ,EMCORE公司的一种新型 32 5mm的GaN生产反应器中外延生长了GaN材料。为在蓝宝石衬底上得到高质量的GaN ,采用高的生长压力和高旋转速度 ,可以在这种旋转盘反应器中实现必要的生长条件。还对 p GaN ,InGaN ,InGaN多量子阱 ,以及LED器件进行了类似的实验 ,都能获得最佳的生长条件。
Reported EMCORE spin disk reactor, or TurboDisc reactor, which is a vertical reactor with a rotating disk. The backing sheet is placed on a plate rotating at high speed and heated to a suitable growth temperature. The reactants are pumped down vertically in the initial stage due to the traction of the high-speed rotating disk and then deflected to form a flow area parallel to the substrate wafer tray. GaN is epitaxially grown in GaNzilla, a new 32 mm GaN production reactor from EMCORE. In order to obtain high quality GaN on sapphire substrates, high growth pressures and high rotational speeds are used to achieve the necessary growth conditions in such a rotating disk reactor. Similar experiments were performed on p GaN, InGaN, InGaN multiple quantum wells, and LED devices to obtain optimal growth conditions.