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在普通MIM隧道发光结的基础上，制备了多层膜结构MIM发光结。这种结构的发光结含有两层氧化物绝缘层及双层MgF2。其发光性能优良，发光效率达10-6-10－5量级。测试表明，其光谱谱峰较普通MIM结有蓝移现象，并且I—V特性中存在强烈的负阻现象（NRP）。
Based on the light-emitting junctions of common MIM tunnels, multi-layer MIM structures were fabricated. The structure of the light-emitting junction contains two layers of oxide insulation and double MgF2. Its excellent luminous performance, luminous efficiency of 10-6-10-5 magnitude. The test shows that the spectral peak has a blue shift compared with the normal MIM junction, and there is a strong negative resistance phenomenon (NRP) in the I-V characteristic.