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以ITO导电玻璃衬底,CuSO4、KI为反应溶液,EDTA为络合剂,通过简单的电化学方法分别在40,60,80℃的电沉积温度下成功制备出高定向的γ-CuI薄膜。讨论了不同沉积温度下碘化亚铜薄膜各项性质的差异,作为比较还利用化学沉积方法在室温下合成了碘化亚铜粉末。利用X射线衍射图(XRD)进行结构分析,场发射扫描电子显微镜(SEM)进行形貌观察。实验结果表明:碘化亚铜薄膜由三角形纳米片构成,沿(111)晶相择优生长。随着电沉积温度的升高,颗粒的尺寸从2μm减小到500 nm。不同电沉积温度制备出的碘化亚铜薄膜均在拉曼光谱上呈现出一个强的LO峰和一个微弱的TO峰,峰的强度均随着电沉积温度的升高而增大。同时,光致发光(PL)光谱的分析显示出强的近带边发射峰。CuI粉末在结构及形貌等性质上与CuI薄膜有一定的差异。
A highly oriented γ-CuI thin film was prepared by simple electrochemical method at the temperature of 40, 60 and 80 ℃ with ITO conductive glass substrate, CuSO4 and KI as reaction solution and EDTA as complexing agent. The differences of various properties of copper iodide films at different deposition temperatures were discussed. As a comparison, a cuprous iodide powder was also synthesized by chemical deposition at room temperature. Structural analysis was performed by X-ray diffraction (XRD), and morphology was observed by field emission scanning electron microscope (SEM). The experimental results show that the CuI films consist of triangular nanosheets and grow along the (111) phase. As the electrodeposition temperature increases, the particle size decreases from 2 μm to 500 nm. The cuprous iodide films prepared at different electrodeposition temperatures show a strong LO peak and a weak TO peak in Raman spectrum, both of which increase with the increase of electrodeposition temperature. At the same time, analysis of the photoluminescence (PL) spectrum shows a strong near-band edge emission peak. CuI powder has some differences from CuI film in structure and morphology.