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碲镉汞(MCT)由于其特殊的禁带宽度,成为一种重要的红外探测器半导体材料。其表面复合中心会严重影响探测器性能,为了减少复合中心及保持电学和化学稳定性,表面钝化成为必不可少的工艺步骤。根据碲、镉、汞3种元素在碱性溶液中的电极电势,计算得出阳极氧化的先后顺序为Cd>Te>Hg,并以其构建了一种氧化过程模型,模拟溶液中负电荷离子渗入材料和材料内部各种离子的位置及价态变化,推导出组成结构,与XPS化学组分分析结果十分吻合。在结构方面,该模型成功解释了缺Hg区、富Cd区和富Te区的存在及其位置,并通过俄歇电子能谱(AES)测试得到了验证,说明模型具有一定的合理性。
Mercury Cadmium Telluride (MCT) has become an important infrared detector semiconductor material due to its special band gap. The surface recombination center can seriously affect the detector performance. In order to reduce the recombination center and maintain the electrical and chemical stability, surface passivation becomes an indispensable process step. According to the electrode potentials of tellurium, cadmium and mercury in alkaline solution, the order of anodic oxidation was calculated as Cd> Te> Hg, and then an oxidation process model was constructed to simulate the negatively charged ions Infiltration of materials and materials within the various ions within the position and valence change, derived compositional structure, and XPS chemical composition analysis results are in good agreement. In terms of structure, the model successfully explained the existence and location of missing Hg region, Cd-rich region and Te-rich region, and verified by Auger electron spectroscopy (AES) test, indicating that the model is reasonable.