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采用中频反应磁控溅射技术,以高纯Ti(99.99%)为靶材,以高纯氮气(99.99%)为反应气体,在铝合金基片上沉积Ti/TiN复合纳米膜层。通过XRD、SEM、EDS等分析Ti/TiN复合纳米膜层微观组织和物相结构,研究基片负偏压对Ti/TiN复合纳米薄膜择优取向生长的影响。研究表明,将片加上-150 V负偏压时,Ti/TiN薄膜优先沿(111)面生长;将基片加上-200 V负偏压时,Ti/TiN薄膜优先沿(220)面生长;将基片加上-350 V负偏压时,Ti/TiN薄膜优先沿(200)面生长。继续增大基片负偏压时,由于薄膜中Ar离子浓度大幅增长,高能离子长时间轰击破坏晶粒取向性,使薄膜呈无择优取向。
Ti / TiN composite nanofilm layer was deposited on aluminum alloy substrate by high frequency reactive magnetron sputtering with high purity Ti (99.99%) as target and high purity nitrogen (99.99%) as reaction gas. The microstructure and phase structure of Ti / TiN composite nanofilm layer were analyzed by XRD, SEM and EDS to study the effect of substrate negative bias on the preferred orientation of Ti / TiN composite nanofilm. The results show that the Ti / TiN thin film preferentially grows along the (111) plane when the substrate is negatively biased at -150 V. When the substrate is negatively biased at -200 V, the Ti / TiN thin film preferentially extends along the (220) plane Growth; when the substrate is negatively biased at -350 V, the Ti / TiN thin film preferentially grows along the (200) plane. Continue to increase the substrate negative bias, due to the Ar ion concentration in the film increased significantly, the long-time bombardment of high-energy ions destroy the grain orientation, the film was no preferred orientation.