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阐述了新型功率半导体器件———集成门极换向型晶闸管ＩＧＣＴ（Ｉｎｔｅｇｒａｔｅｄ Ｇａｔｅ Ｃｏｍ ｍｕｔａｔｅｄ Ｔｈｙｒｉｓｔｏｒ） 的基本工作原理和关键设计技术。ＩＧＣＴ在ＧＴＯ 技术的基础上，采用硬驱动技术，集成其门极驱动电路和反并联二极管，省去了吸收电路，兼具ＧＴＯ 导通损耗低和ＩＧＢＴ 关断均匀的特点。由于其开关频率高，易于串联，故适合在中电压大功率领域使用。
The basic working principle and key design techniques of a new type of power semiconductor device - IGCT (Integrated Gate Com mutated thyristor) with integrated gate commutated thyristor are expounded. Based on GTO technology, IGCT integrates its gate drive circuit and anti-parallel diode with hard drive technology, eliminating the need for an absorption circuit with low GTO conduction losses and uniform IGBT turn-off. Due to its high switching frequency, easy to series, it is suitable for use in the field of high voltage power.