论文部分内容阅读
开发了一个半导体器件的电热耦合器件模拟程序。它以双重能量传输模型为基础，包括了晶格中的热扩散以及载流子的产生、复合所造成的能量变化，考虑了载流子能流对整个热系统的影响。根据电热耦合模拟的特点，本程序采用了组解耦法和异时间步长法两种算法。组解耦法的运算速度是传统算法（全Ｎｅｗｔｏｎ法）的２～３倍而内存空间可节省一半。本程序已被集成到器件模拟软件ＰＩＳＣＥＳ－２Ｈ中。对一个ＳＯＩ结构的负阻效应和瞬态特性的模拟结果表明，该程序能够正确模拟器件发热情况以及自热对器件特性的主要影响。
A thermoelectric coupled device simulation program for semiconductor devices was developed. It is based on the dual energy transfer model, which includes the thermal diffusion in the lattice and the generation of carriers, the energy changes caused by recombination, and the influence of carrier energy flow on the whole thermal system. According to the characteristics of electrothermal coupling simulation, the program uses a group of decoupling and different time-step two algorithms. The decoupling method has a computational speed of 2 ~ 3 times that of the traditional algorithm (all-Newton method) and can save half the memory space. This program has been integrated into the device simulation software PISCES-2H. The simulation results of the negative resistance and transient characteristics of an SOI structure show that the program can correctly simulate the device heating and the main influence of self-heating on the device characteristics.