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本文采用电晕放电技术对硅片的热氧化层注入了氟离子.并通过逐次剥层用椭偏测厚仪测量了剥层后的氧化层厚度,用高频c-v法测量了剥层后的平带电压,从而求得平带电压与氧化层厚度间的关系.并由此求得氧化层中电荷的分布情况.测量结果表明:氟离子注入后,在SiO_2/Si界面处的正电荷面密度比注入前有所增加,在氧化层体内存在有均匀分布的负电荷密度,在靠近SiO_2外表面约100(A|°)左右的区域内,负电荷密度由内向外逐渐增加,在外表面处具有最大的负电荷密度.最后,把我们的结果与Williams的结果进行了比较,并进行了讨论.
In this paper, corona discharge technology was used to implant fluoride ions into the thermal oxide layer of the silicon wafer, and the thickness of the oxide layer after the layer was stripped was measured by successive layer delamination with a high-frequency cv method The relationship between the flat band voltage and the thickness of the oxide layer was obtained, and the distribution of the charge in the oxide layer was obtained.The measurement results show that after the fluorine ion implantation, the positive charge surface at the SiO 2 / Si interface The density increased more than that before the injection, and there was a uniformly distributed negative charge density in the oxide layer. In the region near the outer surface of SiO 2 about 100 (A | °), the negative charge density gradually increased from the inside to the outside, With the largest negative charge density.Finally, we compare the results with those of Williams and discuss them.