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用二次阳极氧化方法制备出分立、双向贯通并且超薄(500—1000 nm)的多孔阳极氧化铝膜,贴合到硅片上进行干法刻蚀,实现图形转移,得到了硅基纳米孔阵列结构,并对工艺中影响图形转移质量的因素进行了探索.扫描电镜(SEM)测试结果表明该途径得到的纳米结构孔形态均匀且大面积有序,孔深度可达到125 nm.对该样品进行热氧化处理后进行光致发光(PL)测试,结果表明其光致发光机理是基于通常较微弱的TO声子辅助的硅带边发光,并实现了显著发光增强,对这种增强效果的物理机理进行了理论分析.该结构具有的独特光学特性为利用这一途径改变硅的弱发光性质,乃至实现硅基高效发光带来曙光.
The porous anodic aluminum oxide films were separated, bi-directionally and ultrathin (500-1000 nm) were prepared by the secondary anodization method, and then bonded to the silicon wafer for dry etching to achieve the pattern transfer. The silicon-based nanopores Array structure and the factors that affect the quality of the pattern transfer in the process were explored.The results of scanning electron microscopy (SEM) showed that the nanostructured pores obtained by this method were uniform and large-area ordered with the pore depth of 125 nm. Photoluminescence (PL) measurements were performed after thermal oxidation. The results show that the photoluminescence mechanism is based on the TO phonon-assisted edge of the silicon, which is usually weaker, and achieves significant luminescence enhancement Physical mechanism of the theoretical analysis of the structure of the unique optical properties for the use of this approach to change the weak silicon light-emitting properties, and even to achieve high-efficiency silicon-based light brings the dawn.