在不同基片温度(RT、300、400、500和600℃)下,采用射频磁控溅射法制备了ZnO薄膜和BZN薄膜。研究表明,所制备的BZN薄膜拥有非晶态结构,ZnO薄膜具有c轴择优取向,在基片温度为500℃时,获得低的漏电流(10-7 A/cm~2),比RT时的漏电流(10-4 A/cm~2)低三个数量级。将所制备的ZnO薄膜和BZN薄膜分别作为ZnO-TFT的有源层和栅绝缘层,研究表明,在基片温度为500℃时,提高了器件性能,所取得的亚阈值摆幅(470mV/dec.)是RT时的亚阈值摆幅(1 271 mV/dec.)的三分之一;界面态密度(3.21×10~(12) cm~(-2))是RT时的界面态密度(1.48×10~(13) cm~(-2))的五分之一。 ZnO films and BZN films were prepared by RF magnetron sputtering at different substrate temperatures (RT, 300, 400, 500 and 600 ℃). The results show that the prepared BZN thin film has an amorphous structure and the ZnO thin film has a preferred c-axis orientation. When the substrate temperature is 500 ° C., a low leakage current (10 -7 A / cm 2) is obtained, which is lower than that at RT Of the leakage current (10-4 A / cm ~ 2) lower three orders of magnitude. The prepared ZnO thin films and BZN thin films were used as the active layer and gate insulating layer of ZnO-TFT respectively. The results show that the device performance is improved when the substrate temperature is 500 ℃. The obtained subthreshold swing (470mV / dec.) is one-third of the subthreshold swing (1 271 mV / dec.) at RT; and the interface state density (3.21 × 10 ~ (12) cm -2) (1.48 × 10 ~ (13) cm ~ (-2)).