论文部分内容阅读
针对反应离子刻蚀氮化硅过程中无图形60nm栅氧的等离子体损伤问题进行了研究。采用接触电势差技术研究了反应刻蚀中电荷在硅片表面上的沉积,利用非接触式CV测试技术研究了Si/SiO2界面态的变化。研究表明,电荷沉积与Si/SiO2界面态密度增加有较好的对应关系,电荷沉积较多的区域具有更高的界面态密度。然而,电荷沉积量与界面态密度不成正比例。
Aiming at the problem of plasma damage in the absence of pattern 60nm gate oxide during reactive ion etching of silicon nitride. The contact potential difference technique was used to study the deposition of charge on the surface of silicon wafer during reactive etching. The change of Si / SiO2 interface state was investigated by non-contact CV test. The results show that charge deposition has a good correspondence with the increase of Si / SiO2 interface state density, while the more charge-deposited region has higher interface state density. However, the charge deposition is not proportional to the interface state density.