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引言采用数学模型来模拟存储矩阵的电气性能的工作愈来愈受到存储器设计者的注意。下面将介绍存储器中的脉冲传送的一个简单模型的改进情况及如何用计算机程序来完成它。这个模型首先是根据一个简化了的数位读出共线的二维存储矩阵的性能而推导出来的。然后这个模型被推广到数位线和读出线分开的情况。最后,也讨论了它在三维矩阵中的应用。虽然数学理论是根据磁心存储器推导出来的,但也着重地指出了在这个数字模型推广到其他技术时
Introduction The use of mathematical models to simulate the electrical properties of memory matrices has drawn increasing attention from memory designers. The following is an introduction to the improvement of a simple model of pulse transmission in memory and how to accomplish it with a computer program. This model is first derived from the performance of a simplified digital readout collinear two-dimensional storage matrix. This model is then generalized to the separation of the digital and readout lines. Finally, it also discusses its application in the three-dimensional matrix. Although mathematical theory is derived from magnetic core memory, it is also highlighted that while this numerical model was generalized to other technologies