ZnS、ZnSe、ZnTe等宽禁带半导体材料构成的超晶格和量子阱结构可望在可见光光电子器件领域发挥重要作用,特别是它们可制成600—700nm光电子器件,在高密度光学信息系统中的应用,前景非常诱人。因此人们正加紧努力研制基于这种材料的光波导、激光器及光学 Superlattices and quantum well structures made of wide bandgap semiconductor materials such as ZnS, ZnSe and ZnTe are expected to play an important role in the field of visible optoelectronic devices. In particular, they can be fabricated into 600-700 nm optoelectronic devices. In high-density optical information systems The application is very attractive. Therefore, people are stepping up efforts to develop optical waveguides, lasers and optics based on this material