利用Ｋ·Ｐ方法计算了阱宽１０．０ｎｍ的ＩｎＧａＡｓ／ＩｎＰ应变量子阱在１％压缩应变、无应变和１％伸张应变三种情况下的能带结构及其态密度．结果表明在阱宽较宽时，伸张应变在１３．５～１３．２３ｍｅＶ能量范围之内子带较少，而在１３．３２～－３８ｍｅＶ能量内，具有比无应变时较低的的态密度．从能带角度考虑，在伸张应变时，利用增大阱宽可以改善器件性能 The energy band structure and density of states of InGaAs / InP strain quantum well with well width of 10.0nm under 1% compressive strain, unstrained strain and 1% tensile strain were calculated by K · P method. The results show that when the well width is wide, the tensile strain is less in the energy range of 13.5 ~ 13.23meV, while it is lower in the energy range of 13.32 ~ -38meV than in the non-strain state. From an energy banding point of view, the device performance can be improved by increasing the well width when strain is applied