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一种MOS集成硅膜片压力传感器已研制成功,它包括在半桥电路中的二个压敏电阻和一个带有单端 N M O S 运算放大器的新型简单的信号调节电路。半桥上压力敏感度的负温度系数由带有温度敏感集成反馈电阻的变增益放大器的正温度系数来补偿。除了膜片的构成采用了 N_2H_4·H_2O 各向异性蚀刻剂以外,这一传感器采用标准的 IC 工艺制成。它采用静电的方法将硅片粘附在一块玻璃板上以减少感生压力。在0～70℃的范围内,半桥上—1750PPm/℃的温度敏感系数在放大器的输出端被补偿至小于+190PPm/℃。在同样的温度范围内,经过了26dB 的放大之后,也获得了小于20m V始端输出偏称量.
A MOS integrated silicon diaphragm pressure sensor has been developed that includes two varistors in a half-bridge circuit and a new simple signal conditioning circuit with a single-ended N MO O operation amplifier. The negative temperature coefficient of pressure sensitivity on the half-bridge is compensated by the positive temperature coefficient of the variable-gain amplifier with the temperature-sensitive integrated feedback resistor. In addition to the N 2 H 4 · H 2 O anisotropic etchant used in the diaphragm configuration, this sensor is fabricated using a standard IC process. It uses electrostatic methods to adhere the silicon wafer to a glass plate to reduce induced pressure. The temperature-sensitivity coefficient at -1750 ppm / ° C on the half-bridge is compensated to less than + 190 ppm / ° C at the output of the amplifier over the range of 0-70 ° C. In the same temperature range, after 26dB of amplification, but also obtained less than 20m V start output bias.