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基于128 kbit AlO_x/WO_x双层结构阻变存储器(RRAM)芯片,提出并验证了还原时间对RRAM开关速度的调制作用,同时设计了一种固定电压幅值逐步增大脉宽的算法用于RRAM阵列中速度的测试。还原处理的时间越长,AlO_x层的厚度越薄,同时氧空位的含量增多,可加快导电细丝的形成、断裂和重新连接,进而提升芯片的开关速度。测试结果表明,还原时间由10 min增加至30 min,在4 V和4.5 V操作电压下,FORMING速度分布的均值分别由200 ns减小至120 ns和由100 ns减小至60 ns;在4 V和4.5 V操作电压下,RESET速度分布的均值分别由160 ns减小至120 ns和由120 ns减小至100 ns;SET速度分布的均值在4 V电压下可由120 ns减小至80 ns。此外,还原时间的增长可以改善速度分布的一致性,减小速度的波动。
Based on the 128 kbit AlO_x / WO_x RRAM chip, the modulation effect of the reduction time on the switching speed of RRAM is proposed and validated. An algorithm for increasing the pulse width of the fixed voltage amplitude is designed for RRAM The speed of the array test. The longer the reduction process, the thinner the AlO_x layer and the more oxygen vacancies, the faster the formation, breaking and reconnection of the conductive filaments and the faster the chip switching speed. The test results show that the reduction time increases from 10 min to 30 min, and the average of the FORMING velocity distribution decreases from 200 ns to 120 ns and from 100 ns to 60 ns at 4 V and 4.5 V. At 4 V and 4.5 V, the mean RESET speed distribution decreases from 160 ns to 120 ns and from 120 ns to 100 ns, respectively. The mean value of SET speed distribution can be reduced from 120 ns to 80 ns at 4 V . In addition, the increase of restore time can improve the consistency of speed distribution and reduce the fluctuation of speed.