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应用水热法制备了注射器样纳米结构氧化锌样品,室温下测量其真空场发射特性.根据测量数据,基于Fowler-Nordheim方程,估算了场发射效应增强因子,观察到增强因子随外加电压增加取值的两阶段性;结合样品的光致发光谱和能量散射谱,应用半导体材料中强场效应理论,结合场发射电流密度测量系统的串联电路等效,研究样品中空位对场发射特性影响机理.结果表明,制备过程中形成的锌、氧空位,在样品中产生了相当于杂质态的缺陷能级,缺陷能级与样品形貌共同作用,使样品较大的增强因子随场强增加而阶跃性下降.最后,用电化学沉淀法和气相传输法制备的纳米氧化锌样品的场发射特性,对上述分析结果进行验证.
A sample of nanostructured zinc oxide was prepared by hydrothermal method and the vacuum field emission characteristics were measured at room temperature.According to the measured data, the field emission enhancement factor was estimated based on the Fowler-Nordheim equation and the enhancement factor was observed as the applied voltage increased Value of the two-stage; combined with the sample of the photoluminescence spectrum and energy scattering spectra, the application of strong field effect theory of semiconductor materials, combined with field emission current density measurement system of series circuit equivalent to study the impact of vacancies on the field emission characteristics of the mechanism The results show that the vacancies of zinc and oxygen formed in the process of preparation produce defect levels equivalent to impurity states in the sample, and the defect levels and the morphology of the sample work together to increase the larger enhancement factor of the sample with increasing field strength Step decline.Finally, the field emission characteristics of nano-ZnO samples prepared by electrochemical precipitation and gas-phase transport were validated by the above analysis results.