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采用直流磁控溅射方法,以Ar/N2作为放电气体(N2/(Ar+N2)=10%),在玻璃衬底上于不同溅射时间获得了γ′-Fe4N单相薄膜。利用X射线衍射(XRD)和超导量子干涉仪(SQUID)研究了溅射时间对薄膜的生长及磁性性能的影响。结果表明薄膜样品明显沿γ′-Fe4N(111)晶面择优取向进行生长,其(111)晶面平行于样品的膜面。随溅射时间的增加,薄膜样品的晶粒尺寸没有明显的变化,薄膜厚度和矫顽力随溅射时间的增加而显著增大。
The γ’-Fe4N single phase thin films were obtained on glass substrates at different sputtering times using DC magnetron sputtering with Ar / N2 as the discharge gas (N2 / (Ar + N2) = 10%). The effects of sputtering time on the growth and magnetic properties of the films were investigated by X-ray diffraction (XRD) and superconducting quantum interference (SQUID). The results show that the film samples grow along the preferred orientation of γ’-Fe4N (111) crystal plane, and the (111) crystal plane is parallel to the film surface of the sample. With the increase of sputtering time, there is no obvious change in the grain size of the film samples. The film thickness and coercive force increase with the increase of sputtering time.