论文部分内容阅读
本文用EBIC法对SBD元件进行了观测。在加速电压1—2.5kV、束流约3×10~(-12)A的条件下,对SBD元件的结深进行了非破坏性测量,其值约13nm,此值与同样元件的二次离子剥离法测量结果相符。
In this paper, EBIC method was used to observe the SBD components. The junction depth of the SBD device was measured non-destructively at an accelerating voltage of 1-2.5 kV and a beam current of about 3 × 10- (-12) A with a value of about 13 nm, Ion stripping method to measure the results.