金属-氢化物-半导体场效应晶体管(MOSFET)目前正广泛地应用于各种存贮器。存贮器的要求和金属-氧化物-半导体器件和工艺的特点导致出许多为此类应用的独特的电路。本文评论了存贮器系统的组织和设计考虑。举出了具体的电路例子进行分析,包括随机存取单元、移位寄存器、只读存贮电路和芯片上的外围电路;讨论了互补和非互补电路。 Metal-hydride-semiconductor field-effect transistors (MOSFETs) are currently being used in a wide variety of memories. Memory requirements and the characteristics of metal-oxide-semiconductor devices and processes have led to many unique circuits for such applications. This article reviews the organization of memory systems and design considerations. Specific circuit examples are given for analysis, including random access units, shift registers, read-only memory circuits and peripheral circuits on the chip; and complementary and non-complementary circuits are discussed.