椭圆偏光法结合阳极氧化剥层技术,测量得到磷注入硅临界剂量附近样品表层的表观光学常数n|~=n-ik,出现一个振荡型的深度分布.在关于离子注入层无序分布的公认结论的基础上,建立了k(x),n(x)同无序度分布D(x)之间的经验关系式,从而从定量上解释了n|~(x)的振荡. Ellipsometry combined with anodic oxidation delamination technique, the apparent optical constants n ~ ~ = n-ik of the surface layer near the critical dose of silicon implanted with phosphorus were measured and an oscillatory depth profile was observed. Based on the general conclusion, the empirical relation between k (x), n (x) and disordered degree distribution D (x) is established, and the oscillation of n | ~ (x) is quantitatively explained.