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依据多量子阱垂直腔面发射半导体激光器（VCSELs）的结构特点，并考虑到腔量子电动力学中自发辐射增强效应，建立了多量子阱VCSELs的速率方程，并给出了其方程的严格解析解．在此基础之上，讨论了VCSELs的稳态特性，并与普通开腔和三维封闭腔中的结果进行了比较．给出了VCSELs中阈值电流密度，光输出和自发辐射与器件结构参数（阱层数，阱宽和势垒厚度）之间的依赖关系．这对于VCSELs的理论研究和优化器件结构将会有所裨益．
According to the structure characteristics of multi-quantum well vertical cavity surface-emitting semiconductor lasers (VCSELs) and taking into account the enhancement of spontaneous emission in cavity quantum electrodynamics, a rate equation of VCSELs with multiple quantum wells is established and a strict analytical solution of the equation . On this basis, the steady-state properties of VCSELs are discussed and compared with the results of ordinary open cavity and closed three-dimensional cavity. The dependence of threshold current density, optical output and spontaneous emission on the device structure parameters (number of well layers, well width and barrier thickness) in VCSELs is given. This will benefit the theoretical study of VCSELs and optimize the device structure.