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以镍硅合金靶作为溅射源,采用磁控溅射方法制备了一种自缓释镍源.控制合适的自缓释镍源的准备条件,以单一方向横向晶化条件对非晶硅薄膜进行再晶化,可以获得低残余镍含量、大晶粒、高薄膜质量的多晶硅.以此多晶硅为有源层进行了薄膜晶体管研究.制备的p型TFT器件具有良好的特性,可有效地减小漏电流,同时具有很好的均匀性和稳定性.
A nickel-silicon alloy target was used as a sputtering source and a self-releasing nickel source was prepared by magnetron sputtering method.Preparation conditions of the suitable self-sustained release nickel source were controlled by a single direction transverse crystallization condition on the amorphous silicon film The polycrystalline silicon with low residual nickel content, large grain size and high film quality can be obtained.The thin film transistor (TFT) has been studied by using this polysilicon as the active layer.The prepared p-type TFT device has good characteristics and can be effectively reduced Small leakage current, at the same time has a very good uniformity and stability.