采用真空反应蒸发技术，蒸发高纯度铟锡合金，在有机薄膜基片上制备出高质量的ＩＴＯ透明导电薄膜．研究了薄膜结构及电阻率、载流子浓度和迁移率等电学参数对制备条件的依赖关系．对制备薄膜的导电机制进行了研究 Vacuum reactive evaporation technique was used to evaporate high purity indium tin alloy to prepare high quality ITO transparent conductive film on organic film substrate. The dependence of film structure and electrical parameters such as resistivity, carrier concentration and mobility on the preparation conditions was investigated. The conducting mechanism of preparing thin films has been studied