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研究的压力敏感芯片利用单晶硅的压阻效应原理制成;采用绝缘层上硅(SOI)材料取消了敏感电阻之间的pn结,有效减小了漏电,提高了传感器的稳定性;用多层复合电极替代传统的铝电极,并应用高掺杂点电极技术,提高了传感器使用温度。封装时,将硅敏感芯片的正面与硼硅玻璃进行对准气密静电键合;在硼硅玻璃的相应位置加工引线孔,将芯片电极和管壳管脚用烧结的方法实现电连接,形成无引线封装结构。采用无油封装方法,避免了含油封装中硅油耐温能力差的问题。对高温压力敏感芯体结构进行了热应力分析,并对无引线封装方法进行了研究。对研制的无引线封装高温压力传感器进行了性能测试,测试结果与设计相符,其中传感器的测量范围为0~0.7 MPa,非线性优于0.2%FS,工作温度上限可达450℃。
The pressure-sensitive chip under study is made of the piezoresistive effect principle of single crystal silicon. The SOI material is used to eliminate the pn junction between the sensitive resistors, which effectively reduces the leakage and improves the stability of the sensor. Multi-layer composite electrode instead of the traditional aluminum electrode, and the application of highly doped electrode technology, increased sensor temperature. During packaging, the front surface of the silicon-sensitive chip is aligned with the borosilicate glass to be airtight and static-bonded; the lead hole is processed at the corresponding position of the borosilicate glass, the chip electrode and the shell-and-tube-shell pin are electrically connected through sintering to form Leadless package structure. Oil-free packaging method to avoid oil-in-package temperature resistance of silicone oil is poor. The thermal stress analysis of high temperature and pressure sensitive core structure was carried out, and the leadless package method was studied. The performance of the developed leadless packaged high temperature pressure sensor was tested and the results were consistent with the design. The measurement range of the sensor was 0 ~ 0.7 MPa, the nonlinearity was better than 0.2% FS and the upper limit of the working temperature was up to 450 ℃.