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石墨烯器件作为下一代纳米电子器件的有力竞争者受到广泛关注,但对其器件工作机理的研究尚不透彻。对石墨烯纳米带场效应晶体管(graphene nanoribbon field effect transistor,GNRFET)的双极特性进行了研究,分析了偏置电压对GNRFET转移特性和输出特性的影响,发现除已被关注到的栅电压外,源漏电压对GNRFET的双极特性亦有作用,并将两者综合考虑才能全面反映GNRFET的工作状态。在此基础上,进一步提出了工作区域的概念,将GNR-FET的工作区域划分为空穴导电区、电子导电区、转变区和截止区,为GNRFET器件的应用和电路设计提供指导。
Graphene devices as a strong competitor to the next generation of nanoelectronic devices have been widely concerned, but the mechanism of the device research is not yet complete. The bipolar characteristics of graphene nanoribbon field effect transistor (GNRFET) were studied, and the influence of bias voltage on the transfer characteristics and output characteristics of GNRFET was analyzed. It was found that in addition to the gate voltage that has been concerned The source-drain voltage also has a role on the bipolar characteristics of the GNRFET, and considering both together can fully reflect the working status of the GNRFET. On this basis, the concept of work area is further proposed. The work area of GNR-FET is divided into hole conduction area, electron conduction area, transition area and cutoff area, which provides guidance for the application and circuit design of GNRFET device.