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提出一种AlGaAs/GaAs HEMT器件沟道电荷新模型,该模型用一个通用解析函数中系数的不同值来描述二维电子气(2DEG)和AlGaAs层中的电子浓度。在小信号特性上,除考虑了2DEG层外,又在考虑了AlGaAs层、速度饱和、饱和区沟道长度调制效应和源、漏串联电阻RS和RD等效应的基础上,推导出直流特性、跨导、输出电导和栅电容的解析表达式。仿真说明,在较大的栅、漏压范围内,该模型的理论值与实验结果符合良好。
A new channel charge model for AlGaAs / GaAs HEMT devices is proposed. The model describes the electron concentrations in 2DEG and AlGaAs layers by using different values of the coefficients in a common analytical function. On the basis of small signal characteristics, considering the effect of 2DEG layer, considering the effect of AlGaAs layer, velocity saturation, channel length modulation effect in saturation region, RS and RD of source and drain series resistance, the DC characteristics are deduced. Transconductance, output conductance and gate capacitance analytic expressions. Simulation shows that the theoretical value of the model is in good agreement with the experimental results in the range of large gate and drain voltage.