研究了基于Al_2O_3中间层的InP/SOI晶片键合技术。该方案利用原子层沉积技术在SOI晶片表面形成Al_2O_3作为InP/SOI键合中间层,同时采用氧等离子体工艺对晶片表面进行活化处理。原子力显微镜和接触角测试结果表明,氧等离子体处理使得晶片的表面特性更适于实现键合。透射电子显微镜和X射线能谱仪测试结果证实,采用Al_2O_3中间层可以实现InP晶片与SOI晶片的可靠键合。 InP / SOI wafer bonding technology based on Al 2 O 3 interlayer was studied. In the scheme, Al 2 O 3 was used as the InP / SOI bonding interlayer on the surface of SOI wafer by ALD, and the surface of the wafer was activated by oxygen plasma process. Atomic force microscopy and contact angle test results show that the oxygen plasma treatment makes the surface properties of the wafer more suitable for bonding. Transmission electron microscopy and X-ray energy dispersive spectroscopy test results confirmed that the use of Al_2O_3 intermediate layer can achieve reliable bonding InP wafer and SOI wafer.