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在分立的介质空间电荷耦合旋转体中,表面声波(SAW)和附近的半导体中的自由载流子的相互作用引起了声波的衰减。衰减的大小取决于表面附近自由载流子的浓度。外加直流电压将改变表面载流子的浓度,而这个改变反映在表面声波的衰减中。分析连续直流电场所引起的表面声波衰减可估计表面态密度。在半导体处于深耗尽型之后,从表面声波衰减至达到稳定状态所需的时间是耗尽区中载流子产生率的一个标志。同时用一个外加同步直流脉冲观察了瞬时效应。
In a discrete dielectric-space charge-coupled rotating body, the interaction of surface acoustic waves (SAWs) and free carriers in nearby semiconductors causes acoustic attenuation. The size of the decay depends on the concentration of free carriers near the surface. The application of DC voltage will change the surface carrier concentration, and this change is reflected in the attenuation of surface acoustic waves. Analysis of surface acoustic wave attenuation caused by continuous DC electric field can estimate surface state density. After the semiconductor is deep depleted, the time it takes for the surface acoustic wave to decay to the steady state is a sign of carrier generation in the depletion region. At the same time, an external synchronous DC pulse was used to observe the transient effect.