The carrier transport layer with reflection reduction morphology has attracted extensive attention for improving the utilization of light. Herein, we intro- duced single-layer hollow ZnO hemisphere arrays (ZHAs) behaving light trapping effect as the electron transport layer in perovskite photodetectors (PDs). The single-layer hollow ZHAs can not only reduce the reflection, but also widen the angle of the effective incident light and especially transfer the distribution of the optical field from the ZnO/FTO interface to the perovskite active layer confirmed by the 3D finite-difference time-domain simulation. These merits benefit for the generation, transport and separation of carriers, improving the light utilization efficiency. Finally, our opti-mized FTO/ZHA/CsPbBr3/carbon structure PDs showed high self-powered perfor-mance with a linear dynamic range of 120.3 dB, a detectivity of 4.2 × 1012 Jones, rise/fall time of 13/28 μs and the f?3 dB of up to 28 kHz. Benefiting from the high device performance, the PD was demonstrated to the application in the directional transmission of encrypted files as the signal receiving port with super high accuracy. This work uniquely utilizes the features of high-performance self-powered perovskite PDs in optical communication, paving the path to wide applications of all-inorganic perovskite PDs.