论文部分内容阅读
自对准硅化物通常用于降低多晶硅栅的薄层电阻(Rs)和硅源/漏(S/D)区域的接触电阻。对于90nm以下的器件,S/D区域还要求是重掺杂的超浅结,以抑制
Salicide is commonly used to reduce the contact resistance of the polysilicon gate’s sheet resistance (Rs) and silicon source / drain (S / D) regions. For devices below 90 nm, S / D regions also require heavily doped ultra-shallow junctions to suppress