论文部分内容阅读
提出了一种计算半导体器件散射矩阵的方法 ,该方法采用数值分析技术 ,把描述有源半导体器件的泊松方程和电流连续性方程与描述输入输出匹配网络的电报方程联立求解 ,得到了晶体管端点电压和端点电流随时间的变化关系 ,根据电压电流值求出器件的散射矩阵 .在设计微波单片集成电路 (MMIC)时 ,可以同时对器件和输入输出匹配电路进行设计 ,缩短了研制周期 .另外计算了 SOI MOSFET微波器件的散射矩阵 .结果表明 ,该方法与传统的参数提取方法相比 ,两者的结果基本一致 .
A method for calculating the scattering matrix of a semiconductor device is proposed. The method uses a numerical analysis technique to solve the Poisson equation and the current continuity equation describing the active semiconductor device together with the telegraph equation describing the input-output matching network, and the transistor The relationship between the terminal voltage and the terminal current changes with time, and the scattering matrix of the device is obtained according to the voltage and current value. When designing the microwave monolithic integrated circuit (MMIC), the matching circuit of the device and the input / output can be designed at the same time, shortening the development cycle In addition, the scattering matrix of SOI MOSFET microwave devices is calculated.The results show that the proposed method is basically the same as the traditional method of parameter extraction.