日本三菱电子公司研发出碳化硅(SiC)MOSFET新结构,在因短路而出现过流时,不再需要高速保护电路来阻断电压,更好满足高能效、小尺寸等领域应用需求。需求背景半导体功率器件是功率电子设备的重要组成部分,广泛用于家用电器、工业机械和轨道交通等众多领域。功率电子设备中的短路能够在半导体功率器件中引起非常大的过流,进而带来损害或引发器件失效。因此,多余的电流必 Japan’s Mitsubishi Electric Corporation developed a new structure of silicon carbide (SiC) MOSFET, in the event of over-current due to short-circuit, no longer need high-speed protection circuit to block the voltage, and better meet the energy efficiency, small size applications and other fields. Background of Requirements Semiconductor power devices are an important part of power electronics and are widely used in many areas such as home appliances, industrial machinery and rail transportation. Short circuits in power electronics can cause very large overcurrent in semiconductor power devices, which in turn can cause damage or cause device failure. Therefore, the excess current must be