Ge-Te系统玻璃溅射薄膜已成功地用于电改写与电擦除只读存储器,但薄膜如何从非晶态转为晶态?它的结构如何?这是关系着器件存储性能的问题。本文以Te_(81)Ge_(15)S_2Sb_2,Te_(81)Ge_(15)S_2Bi_2,Te_(81)Ge_(16)SSb_2三种溅射薄膜为对象,用D.S.C.、X-射线、电子显微镜等手段,分别研究了它们的热谱曲线、析晶晶相和析晶形貌(见图1、图2)。薄膜热处理后的X-射线照相 Ge-Te system glass sputtered films have been successfully used in electrically rewritable and electrically erasable read-only memories, but how does the thin film transition from amorphous to crystalline? What is its structure? This is a matter of storage performance. In this paper, three kinds of sputtered films of Te 81 Ge 15 S 2 Sb 2, Te 81 Ge 15 S 2 Bi 2 and Te 81 Ge 16 Sb 2 were taken as targets. The films were characterized by means of DSC, X-ray and electron microscope , Respectively, their heat spectrum curve, the crystallization phase and the morphology of the crystallization (see Figure 1, Figure 2). X-ray radiography after film heat treatment