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本文报道了一种共沉淀法制备Ho掺杂SBN(SrBi_(2-x)Ho_xNb_2O_9:x=0和0.4),并利用X射线衍射、红外光谱和电学测试对其进行表征.结果表明,Ho掺杂SBN在较高频下具有低损耗和稳定的介电常数.因此这种材料非常适用于非易失FeRAM存储器的应用.
In this paper, Ho-doped SBNs (SrBi_ (2-x) Ho_xNb_2O_9: x = 0 and 0.4) were prepared by coprecipitation method and characterized by X-ray diffraction, FTIR and electrical tests. Heterogeneous SBN has low loss and stable dielectric constant at higher frequencies, so this material is well suited for non-volatile FeRAM memory applications.