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提出了一种新结构的低温多晶硅薄膜晶体管 ( poly- Si TFT) .该 poly- Si TFT由一超薄的沟道区和厚的源漏区组成 .超薄沟道区可有效降低沟道内陷阱密度 ,而厚源漏区能保证良好的源漏接触和低的寄生电阻 .沟道区和源漏区通过一低掺杂的交叠区相连接 .该交叠区使得在较高偏置时 ,靠近漏端的沟道区电力线能充分发散 ,导致电场峰值显著降低 .模拟结果显示该TFT漏电场峰值仅是常规 TFT的一半 .实验结果表明该 TFT能获得好的电流饱和特性和高的击穿电压 .而且 ,与常规器件相比 ,该 TFT的通态电流增加了两倍 ,而最小关态电流减少了3.5倍 .
A new poly-Si thin film transistor (poly-Si TFT) is proposed, which consists of an ultra-thin channel region and a thick source-drain region. The ultra-thin channel region effectively reduces traps in the channel Density, while the thick source and drain regions ensure good source and drain contact and low parasitic resistance.The channel region and the source and drain regions are connected by a low-doped overlap region such that at higher bias , The power line in the channel region close to the drain terminal can be fully diverged, resulting in a significant decrease of the electric field peak.The simulation results show that the leakage peak of the TFT is only half that of the conventional TFT. Experimental results show that the TFT can achieve good current saturation characteristics and high breakdown Voltage. And, compared with conventional devices, the TFT’s on-state current tripled, while the minimum off-state current reduced by 3.5 times.