论文部分内容阅读
用射频磁控溅射技术在石英玻璃衬底上制备出ZnO和In掺杂的ZnO(ZnO∶In)薄膜,研究了In的掺杂和退火对薄膜的结构和光电性质的影响。所制备的薄膜为纤锌矿结构的ZnO相,In的掺杂有利于ZnO薄膜的c轴择优生长,并且使其表面更加致密平整,退火提高了薄膜的结晶行为,但使得薄膜的表面有部分团聚形成。由于In3+替代了Zn2+,提供了一个多余的电子,ZnO薄膜的电阻率从28.9Ω.cm降低到4.3×10-3Ω.cm。由于载流子浓度的增加和晶格尺寸的拉长,In的掺杂使得ZnO薄膜的禁带宽度增加;空气中退火后薄膜的载流子浓度降低和晶格尺寸的减小,使得禁带宽度降低。ZnO薄膜在可见光范围的透光率在90%以上,受In的掺杂和退火的影响不大。室温下用325 nm的激发光源测试了样品的光致发光(PL)谱,发现In的掺杂对薄膜的PL谱影响不大,而退火后的ZnO薄膜在446 nm处的蓝光发射明显增强,更适合于作为蓝色发光器件。
ZnO and In doped ZnO (ZnO: In) films were prepared on quartz glass substrates by RF magnetron sputtering. The effects of In doping and annealing on the structure and photoelectric properties of the films were investigated. The prepared film is a wurtzite ZnO phase. In doping favors the c-axis preferential growth of the ZnO thin film, and the surface of the thin film is denser and smoother. The annealing improves the crystallization behavior of the thin film but makes the surface of the thin film have a part of Reunion formed. Since In3 + replaces Zn2 +, providing an extra electron, the resistivity of ZnO thin film decreases from 28.9Ω.cm to 4.3 × 10-3Ω.cm. Due to the increase of carrier concentration and the increase of lattice size, the doping of In doping increases the forbidden band width of ZnO thin film; the carrier concentration of the thin film after annealing in air decreases and the lattice size decreases, Reduced width. The transmittance of ZnO thin film in the visible range is more than 90%, which is not affected by the doping and annealing of In. The photoluminescence (PL) spectra of the samples were tested at room temperature using a 325 nm excitation light source. It was found that the In doping had little effect on the PL spectra of the films. The blue emission at 446 nm of the annealed ZnO films was significantly enhanced, More suitable as a blue light-emitting device.