Neuromorphic machine vision has attracted extensive attention on wide fields.However,both current and emerging strategies still suffer from power/time inefficiency,and/or low compatibility,complex device structure.Here we demonstrate a driving-voltage-free optoelectronic synaptic device using non-volatile reconfigurable photovoltaic effect based on MoTe2/α-In2Se3 ferroelectric p-n junctions.This function comes from the non-volatile reconfigurable built-in potential in the p-n junction that is related to the ferroelectric polarization in α-In2Se3.Reconfigurable rectification behavior and photovoltaic effect are demonstrated firstly.Notably,the figure-of-merits for photovoltaic effect like photoelectrical conversion efficiency non-volatilely increases more than one order.Based on this,retina synapse-like vision functions are mimicked.Optoelectronic short-term and long-term plasticity,as well as basic neuromorphic learning and memory rule are achieved without applying driving voltage.Our work highlights the potential of ferroelectric p-n junctions for enhanced solar cell and low-power optoelectronic synaptic device for neuromorphic machine vision.